Polishing method, metallization fabrication method, method...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C257SE21230

Reexamination Certificate

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10898252

ABSTRACT:
Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

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