Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive...
Reexamination Certificate
2007-08-14
2007-08-14
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
C438S381000, C029S025030, C029S623500, C361S502000, C361S503000
Reexamination Certificate
active
10990467
ABSTRACT:
A first electrode and a second electrode to be used are electrodes each of which has a collector, and a porous material layer with electron conductivity placed between the collector and a separator, and each of which has a configuration wherein the porous material layer includes at least particles of a porous material with electron conductivity, and a thermoplastic resin being capable of binding the particles of the porous material together and having a softening point TBlower than a softening point TSof the separator. A production method includes a thermal treatment step of thermally treating a laminate at a thermal treatment temperature T1satisfying a condition represented by Formula (1): TB≦T1<TS, thereby bringing the collector of the first electrode, the porous material layer of the first electrode, the separator, the porous material layer of the second electrode, and the collector of the second electrode in the laminate into an integrated state.
REFERENCES:
patent: 6426865 (2002-07-01), Kasahara et al.
patent: 2000-252175 (2000-09-01), None
patent: 2001-250742 (2001-09-01), None
patent: A 2003-157898 (2003-05-01), None
Katai Kazuo
Miyaki Yousuke
Takahashi Tetsuya
Oliff & Berridg,e PLC
TDK Corporation
Tran Long K.
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