Deuterium alloy process for image sensors

Details Deuterium alloy process for image sensors Deuterium alloy process for image sensors

2007-08-07

2007-08-07

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C257SE27133

Reexamination Certificate

active

11029704

ABSTRACT:
A method of alloying an image sensor is disclosed. The method comprises forming various semiconductor devices in a semiconductor substrate. Then, an insulator layer is formed over the semiconductor devices. Finally, deuterium gas is used to alloy said image sensor after the insulator oxide layer has been formed and prior to formation of contact holes in the insulator oxide layer.

REFERENCES:
patent: 6187665 (2001-02-01), Chetlur et al.
patent: 6576522 (2003-06-01), Chetlur et al.
patent: 2002/0031920 (2002-03-01), Lyding et al.
patent: 419745 (2001-01-01), None
patent: 511164 (2002-11-01), None

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