MRAM storage device

Details MRAM storage device MRAM storage device

2007-02-20

2007-02-20

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S296000, C257S306000, C257S307000, C257S308000

Reexamination Certificate

active

10903722

ABSTRACT:
A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.

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patent: WO 03/092076 (2003-11-01), None

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