Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-10-09
2007-10-09
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C216S022000, C216S088000, C216S083000, C216S037000, C216S089000, C216S099000, C216S102000
Reexamination Certificate
active
10928002
ABSTRACT:
A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.
REFERENCES:
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6217416 (2001-04-01), Kaufman et al.
patent: 6258137 (2001-07-01), Garg et al.
patent: 6348076 (2002-02-01), Canaperi et al.
patent: 6375693 (2002-04-01), Cote et al.
patent: 6447371 (2002-09-01), Brusic Kaufman et al.
patent: 6468913 (2002-10-01), Pasqualoni et al.
patent: 6554878 (2003-04-01), Dill et al.
patent: 6620721 (2003-09-01), Lee
patent: 6669983 (2003-12-01), Kagami et al.
patent: 2001/0037821 (2001-11-01), Staley et al.
patent: 2001/0049183 (2001-12-01), Henson et al.
patent: 2002/0012195 (2002-01-01), Lahiri et al.
patent: 2002/0065023 (2002-05-01), Kwok
patent: 2002/0093763 (2002-07-01), Sato et al.
patent: 2003/0133225 (2003-07-01), Hsiao et al.
patent: 2003/0179497 (2003-09-01), Harris et al.
patent: 2003/0188422 (2003-10-01), Hashimoto et al.
patent: 2004/0061229 (2004-04-01), Moslehi
patent: 2004/0145826 (2004-07-01), Sasaki et al.
patent: 2004/0183204 (2004-09-01), Cave et al.
patent: 2005/0107870 (2005-05-01), Wang et al.
patent: 2000012543 (2000-01-01), None
Guthrie Hung-Chin
Jiang Ming
Zhang Hong
George Patricia A.
Hitachi Global Storage Technologies - Netherlands B.V.
Knight G. Marlin
Norton Nadine
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