Layer configuration comprising an electron-blocking element

Details Layer configuration comprising an electron-blocking element Layer configuration comprising an electron-blocking element

2007-12-11

2007-12-11

Nguyen, Nam (Department: 1753)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C428S690000, C136S243000

Reexamination Certificate

active

10641524

ABSTRACT:
A layer configuration on a support, the layer configuration comprising a non-photoactive element exclusive of unsubstituted poly(3,4-alkylenedioxythiophene)s, the element containing at least one polymer selected from the group consisting of polycarboxy-polymers, optionally quaternized polyamine-polymers and poly(vinylphosphonic acid), the surface of one side of the element being contiguous with a positive electrode and the surface on the opposite side of the element being contiguous with a material capable of transporting holes.

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Lee et al.;Advanced Materials, vol. 13 (16), 1274-1278, (Aug. 2001).
Lee et al;J. of Applied Physics, vol. 90 (5), 2128-2134 (Sep. 2001).
Search Report for EP 02 10 2215 (Jan. 27, 2003).

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