De-packaging process for small outline transistor packages

Semiconductor device manufacturing: process – Repair or restoration

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S014000

Reexamination Certificate

active

11189487

ABSTRACT:
A method to de-packaging a semiconductor device to access and test the die within the package. The method involves initially removing molding compound from a first surface of the package to expose the underlying die attach pad of the package. A mask is then formed over the die attach-pad. An etching solution is subsequently introduced through an opening in the mask to etch away the die attach pad. Once the etching is complete, the die attach film is removed. An ohmic contact is then formed on the exposed back surface of the die. The ohmic contact is used to ground the die so that the electrical circuitry on the device will operate properly. Once grounded, the circuitry on the die can be electrically tested and debugged.

REFERENCES:
patent: 6150718 (2000-11-01), Livengood et al.
patent: 6309899 (2001-10-01), Mahanpour et al.
patent: 6329212 (2001-12-01), Dobrovolski
patent: 6429028 (2002-08-01), Young et al.
patent: 6813828 (2004-11-01), Dlugokecki et al.
patent: 6884663 (2005-04-01), Dlugokecki et al.
patent: 6917011 (2005-07-01), Hong et al.
patent: 7063987 (2006-06-01), Rowe et al.
patent: 2002/0048825 (2002-04-01), Young et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

De-packaging process for small outline transistor packages does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with De-packaging process for small outline transistor packages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and De-packaging process for small outline transistor packages will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3879721

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.