Wafer bonding with highly compliant plate having filler...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity

Reexamination Certificate

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C438S455000, C438S457000, C438S458000, C438S459000, C257SE21480, C257SE21519, C257SE21657

Reexamination Certificate

active

10883614

ABSTRACT:
The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts.The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.

REFERENCES:
patent: 3244627 (1966-04-01), Smith et al.
patent: 3720986 (1973-03-01), Cranston
patent: 6821819 (2004-11-01), Benavides et al.
patent: 6841883 (2005-01-01), Farnworth et al.
patent: 6872902 (2005-03-01), Cohn et al.
patent: 2002/0157611 (2002-10-01), Bondestam et al.
patent: 2003/0148596 (2003-08-01), Kellar et al.
patent: 2004/0232537 (2004-11-01), Kobrinsky et al.
(http://microlab.eecs.berkeley.edu/labmanual/chap9/9.2.html, N. Chen, REV. Mar. 2, 2003).

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