Method of manufacturing metal-semiconductor field effect transis

Details Method of manufacturing metal-semiconductor field effect transis Method of manufacturing metal-semiconductor field effect transis

1985-03-25

1986-08-19

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29580, 148 15, 148187, 156647, 357 91, 357 2312, H01L 21265, H01L 21302

Patent

active

046061134

ABSTRACT:
Field effect transistors are manufactured using a substrate of compound semiconductor material by defining two gate areas which have their longitudinal dimensions so oriented with respect to the crystal axes of the substrate that the substrate material is more readily etchable through one of the gate areas than through the other gate area. The semiconductor material is etched through both the gate areas simultaneously with the same etchant, whereby gate recesses of different respective depths are formed in the substrate. Metal is deposited into the recesses.

REFERENCES:
patent: 4286374 (1981-09-01), Hantusch
patent: 4397711 (1983-08-01), Donnelly et al.
patent: 4403396 (1983-09-01), Stein
Chang, L. L., IBM-TDB, 24, (1982), 4071.
Lee et al., Appl. Phys. Letts., 37, (1980), 311.
Yokoyama et al., Appl. Phys. Lett., 42 (1983), 270.

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