Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-11-13
2007-11-13
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S288000, C257S365000
Reexamination Certificate
active
11216915
ABSTRACT:
Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry are described. In one embodiment, active areas are formed over a substrate, with one of the active areas having a width of less than one micron, and with some of the active areas having different widths. A gate line is formed over the active areas to provide transistors having different threshold voltages. Preferably, the transistors are provided with different threshold voltages without using a separate channel implant for the transistors. In another embodiment, a plurality of shallow trench isolation regions are formed within a substrate and define a plurality of active areas having widths at least some of which being no greater than about one micron (or less), with some of the widths preferably being different. One or more gate lines may be coupled to the respective active areas to provide individual transistors, with the transistors corresponding to the active areas having the different widths having different threshold voltages. In another embodiment, two field effect transistors are fabricated having different threshold voltages without using a separate channel implant for one of the transistors versus the other.
REFERENCES:
patent: 4943537 (1990-07-01), Harrington, III
patent: 4987093 (1991-01-01), Teng et al.
patent: 5111069 (1992-05-01), Deierling et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5410176 (1995-04-01), Liou et al.
patent: 5422507 (1995-06-01), Wanlass
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5493251 (1996-02-01), Khambaty et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5665202 (1997-09-01), Subramanian et al.
patent: 5691215 (1997-11-01), Dai et al.
patent: 5702976 (1997-12-01), Schuegraf et al.
patent: 5717635 (1998-02-01), Akatsu
patent: 5721172 (1998-02-01), Jang et al.
patent: 5721173 (1998-02-01), Yano et al.
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5732014 (1998-03-01), Forbes
patent: 5811347 (1998-09-01), Gardner et al.
patent: 5817567 (1998-10-01), Jang et al.
patent: 5821591 (1998-10-01), Krautschneider et al.
patent: 5851899 (1998-12-01), Weigand
patent: 5851900 (1998-12-01), Chu et al.
patent: 5866934 (1999-02-01), Kadosh et al.
patent: 5869396 (1999-02-01), Pan et al.
patent: 5872043 (1999-02-01), Chen
patent: 5880007 (1999-03-01), Varian et al.
patent: 5892707 (1999-04-01), Noble
patent: 5897351 (1999-04-01), Forbes
patent: 5920276 (1999-07-01), Frederick
patent: 5923993 (1999-07-01), Sahota
patent: 5926723 (1999-07-01), Wang
patent: 5950091 (1999-09-01), Fulford, Jr. et al.
patent: 5960276 (1999-09-01), Liaw et al.
patent: 5994178 (1999-11-01), Wu
patent: 5994198 (1999-11-01), Hsu et al.
patent: 6001740 (1999-12-01), Varian et al.
patent: 6009023 (1999-12-01), Lu et al.
patent: 6025623 (2000-02-01), Sunouchi et al.
patent: 6028784 (2000-02-01), Mori et al.
patent: 6037671 (2000-03-01), Kepler et al.
patent: 6048765 (2000-04-01), Wu
patent: 6048771 (2000-04-01), Lin et al.
patent: 6048775 (2000-04-01), Yao et al.
patent: 6057207 (2000-05-01), Lin et al.
patent: 6057210 (2000-05-01), Yang et al.
patent: 6060394 (2000-05-01), Wu
patent: 6071792 (2000-06-01), Kim et al.
patent: 6107134 (2000-08-01), Lu et al.
patent: 6121651 (2000-09-01), Furukawa et al.
patent: 6124183 (2000-09-01), Karlsson et al.
patent: 6133055 (2000-10-01), Yeh
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6153467 (2000-11-01), Wu
patent: 6156620 (2000-12-01), Puchner et al.
patent: 6159822 (2000-12-01), Yang et al.
patent: 6171929 (2001-01-01), Yang et al.
patent: 6177324 (2001-01-01), Song et al.
patent: 6180458 (2001-01-01), Krautschneider et al.
patent: 6191446 (2001-02-01), Gardner et al.
patent: 6228713 (2001-05-01), Pradeep et al.
patent: 6236079 (2001-05-01), Nitayama et al.
patent: 6261883 (2001-07-01), Koubuchi et al.
patent: 6261914 (2001-07-01), Divakaruni et al.
patent: 6265282 (2001-07-01), Lane et al.
patent: 6278295 (2001-08-01), Lovett
patent: 6281082 (2001-08-01), Chen et al.
patent: 6294422 (2001-09-01), Sunouchi et al.
patent: 6297082 (2001-10-01), Lin et al.
patent: 6297129 (2001-10-01), Tran et al.
patent: 6309942 (2001-10-01), Tsui et al.
patent: 6312997 (2001-11-01), Tran
patent: 6323082 (2001-11-01), Furukawa et al.
patent: 6329251 (2001-12-01), Wu
patent: 6351019 (2002-02-01), DeBrosse et al.
patent: 6353242 (2002-03-01), Watanabe et al.
patent: 6391756 (2002-05-01), Pan et al.
patent: 6403484 (2002-06-01), Lim et al.
patent: 6411555 (2002-06-01), Tran
patent: 6420749 (2002-07-01), Divakaruni et al.
patent: 6423620 (2002-07-01), Pan et al.
patent: 6426534 (2002-07-01), Look et al.
patent: 6429081 (2002-08-01), Doong et al.
patent: 6436751 (2002-08-01), Liou et al.
patent: 6492693 (2002-12-01), Tran
patent: 6501114 (2002-12-01), Cho et al.
patent: 6509595 (2003-01-01), Leung et al.
patent: 6545904 (2003-04-01), Tran
patent: 6573548 (2003-06-01), Leung et al.
patent: 6620704 (2003-09-01), Miura et al.
patent: 6642098 (2003-11-01), Leung et al.
patent: 6649461 (2003-11-01), Lai et al.
patent: 6674134 (2004-01-01), Berry et al.
patent: 6734487 (2004-05-01), Tran et al.
patent: 6744676 (2004-06-01), Leung et al.
patent: 6770927 (2004-08-01), Cho et al.
patent: 6784048 (2004-08-01), Leung et al.
patent: 6834019 (2004-12-01), Tran et al.
patent: 6902975 (2005-06-01), Tu
patent: 6914287 (2005-07-01), Tran
patent: 7020020 (2006-03-01), Lojek
patent: 7057257 (2006-06-01), Tran
patent: 7071515 (2006-07-01), Sheu et al.
patent: 2001/0012664 (2001-08-01), Tran
patent: 2001/0020724 (2001-09-01), Berry et al.
patent: 2001/0052610 (2001-12-01), Leung et al.
patent: 2002/0053691 (2002-05-01), Leung et al.
patent: 2002/0072199 (2002-06-01), Tran
patent: 2002/0195670 (2002-12-01), Tran
patent: 2003/0001181 (2003-01-01), Leung et al.
patent: 2003/0020106 (2003-01-01), Tran
patent: 2003/0151071 (2003-08-01), Leung et al.
patent: 2003/0151072 (2003-08-01), Leung et al.
patent: 2004/0188777 (2004-09-01), Hwang
patent: 2004/0207100 (2004-10-01), Madurawe
patent: 2004/0214355 (2004-10-01), Miura et al.
patent: 2005/0012173 (2005-01-01), Sheu et al.
patent: 2005/0029599 (2005-02-01), Tran
patent: 2005/0258485 (2005-11-01), Kohyama
patent: 2005/0285163 (2005-12-01), Tran
patent: 2005/0285201 (2005-12-01), Tran
patent: 2005/0287733 (2005-12-01), Tran
patent: 2006/0008977 (2006-01-01), Tran
patent: 2006/0062050 (2006-03-01), Lojek
patent: 2006/0079068 (2006-04-01), Sheu et al.
patent: P2000-77678 (2000-03-01), None
S. Wolf, Silicon Processing for the VLSI Era, vol. 3—The Submicron MOSFET, © 1995 Lattice Press, pp. 330, 331, 366 and 367.
Wolf et al., “Silicon Processing for the VLSI Era”—vol. 1—Process Technology—Second Edition, © 2000, 6 pages.
Van Zant, Peter, “Microchip Fabrication—Third Edition,” © 1997, p. 332.
Micro)n Technology, Inc.
Schillinger Laura M.
Wells St. John P.S.
LandOfFree
Transistor assemblies does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor assemblies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor assemblies will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3876243