Semiconductor device and method for manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

Reexamination Certificate

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Details

C257SE21519, C257S678000, C257S780000, C257S782000, C257S778000, C438S111000, C438S612000, C156S073100

Reexamination Certificate

active

11100541

ABSTRACT:
A wiring pattern is provided on an insulating tape. Part of the wiring pattern is a connection section. An insulating resin is provided so that the connection section is coated with the insulating resin. A protrusion electrode of a semiconductor element is so positioned on the connection section so that the protrusion electrode will push away the insulating resin and be connected with the connection section. Then, the semiconductor is pressed in Direction D1.Heat is applied while pressing in Direction D1.In this way, the connection section intrudes into the protrusion electrode, thereby causing the connection section and the protrusion electrode to be connected with each other.

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Japanese Office Action dated Apr. 18, 2006.

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