Pattern layout of word line transfer transistors in NAND...

Details Pattern layout of word line transfer transistors in NAND... Pattern layout of word line transfer transistors in NAND...

2007-12-25

2007-12-25

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S230030

Reexamination Certificate

active

11627727

ABSTRACT:
A semiconductor device includes a memory cell array, first word lines, second word lines and interconnection switching region. The memory cell array includes electrically rewritable nonvolatile memory cells. Each first word line is connected in common to memory cells of a corresponding row. Second word lines correspond to the respective first word lines. The second word lines are formed of a second interconnection of a layer different from that of the first interconnection. An interconnection switching region is provided between the first word lines and the second word lines. The interconnection switching region connect selected portions of the first interconnection and the second interconnection. The interconnection switching region has a multilayered interconnection structure in which the first word lines cross the second word lines to change at least part of layout positions.

REFERENCES:
patent: 5924004 (1999-07-01), Hsu
patent: 6188611 (2001-02-01), Endoh et al.
patent: 6240022 (2001-05-01), Sakui et al.
patent: 6507508 (2003-01-01), Hosono et al.
patent: 6654281 (2003-11-01), Georgakos et al.
patent: 6839283 (2005-01-01), Futatsuyama et al.
patent: 7006383 (2006-02-01), Tanaka
patent: 7177173 (2007-02-01), Futatsuyama
patent: 2006/0007751 (2006-01-01), Tanaka
patent: 11-177071 (1999-07-01), None
patent: 2002-141477 (2002-05-01), None

Affiliated with

Also associated with

Rating

Pattern layout of word line transfer transistors in NAND... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern layout of word line transfer transistors in NAND..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern layout of word line transfer transistors in NAND... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3875621