Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-10-16
2007-10-16
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185280
Reexamination Certificate
active
11228389
ABSTRACT:
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.
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patent: 5602779 (1997-02-01), Gotou
patent: 5818753 (1998-10-01), Gotou
patent: 6097634 (2000-08-01), Sugiyama
patent: 6331953 (2001-12-01), Wang et al.
Kanamitsu Michitaro
Kawahara Takayuki
Kobayashi Naoki
Kobayashi Takashi
Kubono Shoji
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Device Engineering & Co., Ltd.
Hitachi Ulsi Systems Co., Ltd.
Hoang Huan
Renesas Technology Corp.
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