Forming nonvolatile phase change memory cell having a...

Details Forming nonvolatile phase change memory cell having a... Forming nonvolatile phase change memory cell having a...

2007-08-21

2007-08-21

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S100000, C438S102000

Reexamination Certificate

active

11040465

ABSTRACT:
The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volume assists this phase change. In the present invention, a layer in a pillar-shaped section of a memory cell is etched laterally, decreasing its cross-section. In this way the cross section of the contact area between the heater layer and the phase change material is reduced. In preferred embodiments, the laterally etched layer is the heater layer or a sacrificial layer. In a preferred embodiment, such a cell can be used in a monolithic three dimensional memory array.

REFERENCES:
patent: RE37259 (2001-07-01), Ovshinsky
patent: 7092286 (2006-08-01), Lowrey et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0158950 (2005-07-01), Scheuerlein et al.

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