Surface emitting semiconductor laser

Details Surface emitting semiconductor laser Surface emitting semiconductor laser

2007-02-20

2007-02-20

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

10629777

ABSTRACT:
A surface emitting semiconductor laser is formed from a substrate having a first mirror formed thereon. The first mirror includes semiconductor layers of a first conductivity type. A second mirror is formed over the substrate and includes semiconductor layers of a second conductivity type. An active region is disposed between the first and second mirrors, with a current confining layer being disposed between the first and second mirrors. A compound semiconductor layer is formed over the second mirror and an electrode is formed on the compound semiconductor layer. A protective film covers the compound semiconductor layer and partially covers the electrode. The electrode is formed by a lift-off process and uses an opening-pattern that is formed by plasma ashing.

REFERENCES:
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patent: 5945690 (1999-08-01), Saito et al.
patent: 6656759 (2003-12-01), Nakanishi et al.
patent: 2002/0110169 (2002-08-01), Iwai et al.
patent: A 10-154707 (1998-06-01), None
patent: 2002009393 (2002-01-01), None

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