Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-23

2007-10-23

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000

Reexamination Certificate

active

11244140

ABSTRACT:
There is disclosed a semiconductor device comprising a plurality of inter-level dielectric films which are stacked and provided in plural layers above a substrate, at least one first conductor which is provided in at least one inter-level dielectric film of the stacked inter-level dielectric films, and a plurality of second conductors which are provided in the inter-level dielectric film in which the first conductor is provided and which are connected to the lower surface of the first conductor and which are extended along the downward direction from the first conductor and further extended along a first direction and a second direction perpendicular to the first direction in such a manner as to be spaced apart from each other to form a lattice shape.

REFERENCES:
patent: 2004/0113238 (2004-06-01), Hasunuma et al.
patent: 2005/0167842 (2005-08-01), Nakamura et al.
patent: 2004-119969 (2004-04-01), None
Hasunuma, M. et al., “Semiconductor Device,” U.S. Appl. No. 11/168,928, filed Jun. 29, 2005.

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