Overlay key, method of manufacturing the same and method of...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C438S005000, C438S022000, C438S462000, C257SE23179

Reexamination Certificate

active

11175441

ABSTRACT:
An overlay key includes a first overlay key having a first main overlay pattern and a first auxiliary pattern, and a second overlay key having a second main overlay pattern and a second auxiliary overlay pattern, the second auxiliary overlay pattern formed at a location corresponding to the first auxiliary overlay pattern.

REFERENCES:
patent: 6238939 (2001-05-01), Wachs et al.
patent: 6323560 (2001-11-01), Narimatsu et al.
patent: 6391737 (2002-05-01), Ku et al.
patent: 6410401 (2002-06-01), Ohtaka
patent: 6529282 (2003-03-01), Stirton et al.
patent: 6573986 (2003-06-01), Smith et al.
patent: 6620557 (2003-09-01), Hosono et al.
patent: 6656644 (2003-12-01), Hasegawa et al.
patent: 6801827 (2004-10-01), Yoshitake et al.
patent: 2001/0048145 (2001-12-01), Takeuchi et al.
patent: 1020020052464 (2002-07-01), None

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