Etching method, gate etching method, and method of...

Details Etching method, gate etching method, and method of... Etching method, gate etching method, and method of...

2007-11-06

2007-11-06

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

C438S694000, C438S700000, C438S704000, C438S725000, C216S070000, C216S071000, C216S072000, C216S073000

Reexamination Certificate

active

11011947

ABSTRACT:
In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carried out. The layer and the resist pattern of the dummy sample are etched in an etching device so that the layer and the resist pattern of the dummy device are simultaneously slimmed. Finally, the layer and the resist pattern of the actual device are etched in the etching device after the etching of the dummy sample so that the layer and the resist pattern of the actual device are simultaneously slimmed.

REFERENCES:
patent: 4732871 (1988-03-01), Buchmann et al.
patent: 5746928 (1998-05-01), Yen et al.
patent: 5804088 (1998-09-01), McKee
patent: 6394104 (2002-05-01), Chen et al.
patent: 6458655 (2002-10-01), Yuzuriha et al.
patent: 6479390 (2002-11-01), Lee
patent: 6764898 (2004-07-01), En et al.
patent: 6849556 (2005-02-01), Takahashi
patent: 7045462 (2006-05-01), Sakai et al.
patent: 7087532 (2006-08-01), Dobuzinsky et al.
patent: 7179744 (2007-02-01), Lee et al.
patent: 2004/0058517 (2004-03-01), Nallan et al.
patent: 2004/0058533 (2004-03-01), Sakai et al.
patent: 358113375 (1983-07-01), None
patent: 04-29349 (1992-01-01), None
patent: 05-074739 (1993-03-01), None
patent: 05-144779 (1993-06-01), None
patent: 06-005564 (1994-01-01), None
patent: 06-084851 (1994-03-01), None
patent: 10-012598 (1998-01-01), None
patent: 2000-058830 (2000-02-01), None
patent: 2000-323452 (2000-11-01), None

Affiliated with

Also associated with

Rating

Etching method, gate etching method, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching method, gate etching method, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method, gate etching method, and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3872321