Semiconductor device manufactured by the damascene process...

Details Semiconductor device manufactured by the damascene process... Semiconductor device manufactured by the damascene process...

2007-02-06

2007-02-06

Pham, Thanhha S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S775000

Reexamination Certificate

active

11035745

ABSTRACT:
A semiconductor device including a second insulating film formed on a substantially flat surface, on which a surface of a first wiring and a surface of a first insulating film are continued, to cover the first wiring, a wiring trench formed in the second insulating film, connection holes formed in the second insulating film to extend from the wiring trench to the first wiring, dummy connection holes formed in the second insulating film to extend from the wiring trench to a non-forming region of the first wiring, and a second wiring buried in the connection holes and the wiring trench to be connected electrically to the first wiring and also buried in the dummy connection holes, and formed such that a surface of the second wiring and a surface of the second insulating film constitute a substantially flat surface.

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Copy of European Patent Office Communication with European Search Report for corresponding European Patent Appl. No. 02026987 dated Feb. 22, 2005.

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