Method of programming and erasing multi-level flash memory

Details Method of programming and erasing multi-level flash memory Method of programming and erasing multi-level flash memory

2007-02-06

2007-02-06

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185330, C365S185180, C365S185190, C365S185240, C365S185200, C365S185220

Reexamination Certificate

active

11198684

ABSTRACT:
A programming method of the multi-level flash memory comprises shooting a programming voltage that is increasing upwards stepwise each time into the gate of the multi-level flash memory, and following, shooting a program verify voltage that is decreasing downwards to program a multi-level in the multi-level flash memory and shooting an additional programming voltage into the multi-level flash memory after the last program verify voltage is shot. An erasing method of the multi-level flash memory comprises shooting an erasing voltage that is decreasing downwards stepwise each time into a gate of the multi-level flash memory, and following, shooting a erase verify voltage that is increasing upwards to erase a multi-level in the multi-level flash memory and shooting an additional voltage into the multi-level flash memory after the last erase verify voltage is shot.

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