Method for manufacturing micro-machined switch using pull-up...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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Details

C438S456000, C438S107000

Reexamination Certificate

active

11231551

ABSTRACT:
The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below.The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible.The present invention provides a pull-up type RF micro-machined switch, wherein the shorting of the contact pad with the transmission lines is possible with a low DC voltage by altering the conventional pull-down type electrostatic electrode into a pull-up structure and the opening of the circuit is facilitated by the weight of the contact pad by composing the contact pad in a thick metal layer.

REFERENCES:
patent: 6621392 (2003-09-01), Volant et al.
patent: 6635506 (2003-10-01), Volant et al.
patent: 6701779 (2004-03-01), Volant et al.
patent: 6969630 (2005-11-01), Ozgur
patent: 7098517 (2006-08-01), Matsuo
patent: 2004006310 (2004-01-01), None
patent: WO03054938 (2003-07-01), None

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