Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2007-06-12
2007-06-12
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S592100, C029S602100, C073S861354, C073S861355, C073S861357, C073S204230, C257S412000, C257S413000, C257S755000
Reexamination Certificate
active
11088175
ABSTRACT:
A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.
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“A constant-temperature gas flowmeter with a silicon micromachined package”; Mastrangelo, C.H.; Muller, R.S.; Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE; Jun. 6-9, 1988; pp. 43-46.
Horie Junichi
Nakada Keiichi
Watanabe Izumi
Yamada Masamichi
Crowell & Moring LLP
Hitachi Car Engineering Co. Ltd.
Kim Paul D.
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