Semiconductor chip manufacturing method, semiconductor chip,...

Details Semiconductor chip manufacturing method, semiconductor chip,... Semiconductor chip manufacturing method, semiconductor chip,...

2007-08-21

2007-08-21

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S777000, C257SE21511

Reexamination Certificate

active

11197470

ABSTRACT:
The invention provides a semiconductor chip manufacturing method, including a step of forming a front-surface-side concave portion in a semiconductor substrate having a front surface and a rear surface, a functional device being formed on the front surface, the front-surface-side concave portion being formed in the front surface and having a predetermined depth smaller than a thickness of the semiconductor substrate; a dummy plug forming step of supplying nonmetallic material into the front-surface-side concave portion and embedding a dummy plug made of the nonmetallic material; a thinning step of removing a part of the rear surface of the substrate and thinning the semiconductor substrate so that the thickness of the semiconductor substrate becomes smaller than the depth of the front-surface-side concave portion and so that the front-surface-side concave portion is formed into a through-hole; a dummy plug removing step of removing the dummy plug; and a step of supplying metallic material into the through-hole and forming a penetration electrode.

REFERENCES:
patent: 6847275 (2005-01-01), Sayanagi et al.
patent: 2002/0127776 (2002-09-01), Nakajo et al.
patent: 2005/0029674 (2005-02-01), Kazama et al.
patent: 2000-510288 (2000-08-01), None
patent: 2002-009223 (2002-01-01), None
patent: 2002-118224 (2002-04-01), None
patent: 2002-270721 (2002-09-01), None
patent: WO98/19337 (1998-05-01), None

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