Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-06-05
2007-06-05
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S700000, C257SE21214, C257SE21218
Reexamination Certificate
active
11138804
ABSTRACT:
A method for forming an oblique recess of minimum dimension smaller than 10 μm in a wafer arranged in a plasma etch reactor in which the plasma extends along the wafer surface, including forming discontinuities in the contour of the plasma and of its sheath in the immediate vicinity of the wafer in areas where recesses delimited by openings in a protection mask are desired to be formed at the wafer surface.
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Bellieres Laurent
Boufnichel Mohamed
Estrada Michelle
Jorgenson Lisa K.
Morris James H.
Stark Jarrett J.
STMicroelectronics S.A.
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