Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-08-14
2007-08-14
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257SE29003
Reexamination Certificate
active
11186907
ABSTRACT:
A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
REFERENCES:
patent: 5248630 (1993-09-01), Serikawa et al.
patent: 6501095 (2002-12-01), Yamaguchi et al.
patent: 6670638 (2003-12-01), Tamura et al.
patent: 6737672 (2004-05-01), Hara et al.
patent: 2002/0031876 (2002-03-01), Hara et al.
patent: 2002/0100909 (2002-08-01), Yamaguchi et al.
patent: 2002/0102823 (2002-08-01), Yamaguchi et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: A-10-41234 (1989-02-01), None
patent: A-7-321339 (1995-12-01), None
patent: A-08-55808 (1996-02-01), None
S.M. Sze, “Physics of Semiconductor Devices,” Second Edition, 1981, W. Wiley & Songs, New York, NY, USA.
Hatano Mutsuko
Park Sedng-Kee
Shiba Takeo
Tai Mitsuharu
Yamaguchi Shin'ya
Antonelli, Terry Stout & Kraus, LLP.
Tran Minh-Loan
LandOfFree
Thin film semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3869413