Process for detaching layers of material

Details Process for detaching layers of material Process for detaching layers of material

2007-11-27

2007-11-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S799000, C257SE21568

Reexamination Certificate

active

11001088

ABSTRACT:
A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature to a final annealing temperature while evolving according to a first phase up to a transition temperature, then according to a second phase during which the rise in temperature per unit of time is greater than that of the first phase. The invention also concerns an application for using this process in a particular semiconductor fabrication technique.

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