Quantitative two-dimensional dopant profile measurement and inve

Details Quantitative two-dimensional dopant profile measurement and inve Quantitative two-dimensional dopant profile measurement and inve

1995-03-22

1996-06-04

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324662, 324458, 324663, 324689, 324671, 250306, G01R 2912

Patent

active

055237002

ABSTRACT:
Quantitative dopant profile measurements are performed on a nanometer scale by using a scanning capacitance microsope. A nanometer scale tip of the microscope is positioned at a semiconductor surface, and local capacitance change is measured as a function of sample bias. The method incorporates a feedback system and procedure in which the magnitude of the AC bias voltage applied to the sample is adjusted to maintain a constant capacitance change as the tip is scanned across the sample surface. A one dimensional model is used to extract dopant density profiles from the measurements made by the scanning capacitance microscope.

REFERENCES:
patent: 5065103 (1991-11-01), Slinkman et al.

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