Bias circuit with threshold voltage change compensation...

Details Bias circuit with threshold voltage change compensation... Bias circuit with threshold voltage change compensation...

2007-06-12

2007-06-12

Pascal, Robert (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

Reexamination Certificate

active

11048930

ABSTRACT:
A bias circuit which applies a bias voltage to a control terminal of a first active element for an RF signal amplification, includes a threshold voltage change compensation circuit and a first temperature compensation circuit. The threshold voltage change compensation circuit contains a second active element and compensates the bias voltage based on a change in threshold voltage of the first active element by using the second active element. The first temperature compensation circuit is connected between the control terminal and the voltage change compensation circuit and configured to compensate a change in the bias voltage based on a temperature change.

REFERENCES:
patent: 5506544 (1996-04-01), Staudinger et al.
patent: 6160280 (2000-12-01), Bonn et al.
patent: 6304130 (2001-10-01), Poulin et al.
patent: 6946913 (2005-09-01), Moriwaki et al.
patent: 0 942 524 (1999-09-01), None
patent: 2001-168699 (2001-06-01), None
Yamauchi et al.., “X-Band MMIC Power Amplifier With an On-Chip Temperature-Compensation Circuit”, IEEE-Transactions on Microwave and Techniques, vol. 49, No. 12, Dec. 2001.
Yamanaka et al., “Bias Circuit for High Yield Self-Bias MMIC Amplifier for APAAS”, 2003 IEEE, MTT-S Digest TU5B-3, pp. 121-124.
By Yasuyuki Itou et al., “Base and Application of MMIC Technology”, May 31, 1996 Realice company, p. 130.
Yamanaka et al., “Ku-Band Low Noise MMIC Amplifier With Bias Circuit for Compensation of Temperature Dependence and Process Viariation”, 2002 IEEE MTT-S Digest Th1B-4, pp. 1427-1430.

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