Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-02-20
2007-02-20
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S085000, C257S194000
Reexamination Certificate
active
10987518
ABSTRACT:
A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the p-type contact layer within the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure made of either SiN and undoped indium-gallium-nitride (InGaN), or SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided. The GaN-based LEDs according to the invention therefore have superior external quantum efficiency and lighting efficiency.
REFERENCES:
patent: 6847046 (2005-01-01), Wei et al.
patent: 7049638 (2006-05-01), Wu et al.
patent: 2006/0102921 (2006-05-01), Wu et al.
Chien Fen-Ren
Tu Ru-Chin
Wen Tzu-Chi
Wu Liang-Wen
Yu Cheng-Tsang
Doan Theresa T.
Formosa Epitaxy Incorporation
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