Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-08-14
2007-08-14
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S029000, C257SE33071, C257SE33073, C349S062000, C349S193000
Reexamination Certificate
active
11166090
ABSTRACT:
A poly-silicon liquid crystal display device with an improved aperture ratio and a simplified method of fabricating the same are disclosed. A liquid crystal display device according to the present invention includes first and second substrates; a gate line on the first substrate; a data line crossing the gate line to define a pixel region; a thin film transistor (TFT) near the crossing of the gate and data lines, the TFT having a gate electrode, a source electrode and a drain electrode; a pixel electrode in the pixel region, the pixel electrode having a double-layer structure in which a metal layer is formed on a transparent conductive layer; a black matrix on the second substrate, the black matrix having an aperture portion partially overlapping the pixel electrode and the drain electrode; and a liquid crystal layer between the first and second substrates.
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Fourson George R.
Garcia Joannie Adelle
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
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