Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-10-09
2007-10-09
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
Reexamination Certificate
active
10105286
ABSTRACT:
A multilayer interconnection structure that offers a fast semiconductor operation is realized by employing copper wiring, electro migration of which is prevented from occurring by providing a via plug that includes a layer of a high melting-point metal, such as tungsten.
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Kitada Hideki
Ohba Takayuki
Ohtsuka Nobuyuki
Shimizu Noriyoshi
Crane Sara
Fujitsu Limited
Gebremariam Samuel A.
Westerman, Hattori, Daniels & Adrian , LLP.
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