Method for fabricating seed layer for spin valve sensor for...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C360S324000, C360S324110, C360S324120, C029S603010, C029S603070

Reexamination Certificate

active

11455204

ABSTRACT:
A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently fabricated. The preferred embodiment fabrication process of the NiFeCr layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 10 Å to 40 Å. The Cr at. % composition in the NiFeCr layer is preferably from approximately 35 at. % to approximately 46 at. %. The crystal structure of the surface of the etched back NiFeCr layer results in an improved crystal structure to the subsequently fabricated spin valve sensor layers, such that the fabricated spin valve exhibits increased ΔR/R and reduced coercivity.

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Research Disclosure, Apr. 2000, “Lower HC Through Surface Modification.” Disclosed by International Business Machines Corporation 432117.

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