Transistor integrated circuit apparatus

Details Transistor integrated circuit apparatus Transistor integrated circuit apparatus

2007-10-02

2007-10-02

Mottola, Steven J. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

C330S307000

Reexamination Certificate

active

11194465

ABSTRACT:
A transistor integrated circuit apparatus generating less noise, having superb RF characteristics, and preventing thermal runaway of transistors is provided. Owing to capacitors C11through C1nhaving one end commonly connected to an RF signal input terminal RFin and the other end connected to a base electrode of a corresponding transistor, and inductors L11through L1nhaving one end commonly connected to a DC power supply input terminal DCin and the other end connected to a base electrode of a corresponding transistor, RF noise generated in a DC power supply circuit is reduced. This can reduce the RF noise output from the transistors Tr11through Tr1n. The inductors L11through L1nprevent an RF signal input from the RF input terminal RFin from flowing toward the DC power supply circuit. This can prevent the RF signal from being lost by the flow thereof toward the DC power supply circuit.

REFERENCES:
patent: 5608353 (1997-03-01), Pratt
patent: 6897732 (2005-05-01), Iwai
patent: 2004/0145415 (2004-07-01), Sun

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