Method for manufacturing a piezoelectric device

Details Method for manufacturing a piezoelectric device Method for manufacturing a piezoelectric device

2007-12-25

2007-12-25

Trinh, Minh (Department: 3729)

Metal working

Piezoelectric device making

C029S025420, C029S594000, C029S595000, C310S311000, C333S195000

Reexamination Certificate

active

11000517

ABSTRACT:
A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.

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