Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2007-10-02
2007-10-02
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S700000, C257SE21008, C257S503000, C257S511000
Reexamination Certificate
active
11246150
ABSTRACT:
A semiconductor device includes a base substrate; a first fixing layer provided on the base substrate; a first semiconductor chip fixed on the first fixing layer; a first substrate provided above the first semiconductor chip; a plurality of first connection members isolated from the first semiconductor chip, electrically connecting to the first substrate with the base substrate; and a first encapsulating layer provided around the first connection members.
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Notification of Reason(s) for Refusal Issued by the Korean Patent Office on Sep. 27, 2006, for Korean Patent Application No. 10-2005-95935 and English-language translation thereof.
Notification of the Reasons for Refusal on the first examination issued by the Chinese Patent Office on May 18, 2007, in Chinese Patent Application No. 200510108390.5, Japanese-language version of the Notification, and English-language translation of the Japanese-language version of the Notification.
Matsui Mikio
Omizo Shoko
Kabushiki Kaisha Toshiba
Nhu David
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