Photoelectric conversion layer stack type color solid-state...

Details Photoelectric conversion layer stack type color solid-state... Photoelectric conversion layer stack type color solid-state...

2007-06-12

2007-06-12

Lee, John R. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S214100

Reexamination Certificate

active

11377408

ABSTRACT:
A solid-state image sensing device comprising: a silicon substrate; a photoelectric conversion layer provided for absorbing a green light component to generate optical charge; and photodiodes provided in a shallow portion and in a deep portion respectively in a depth direction of the silicon substrate, wherein the solid-state image sensing device further comprises a trimming layer provided between the photoelectric conversion layer and the silicon substrate for adjusting intensity of each of respective color light components of the light which is transmitted through the photoelectric conversion layer so as to be made incident on the photodiodes.

REFERENCES:
patent: 6841816 (2005-01-01), Merrill et al.
patent: 7129466 (2006-10-01), Iwasaki
patent: 2003/0209651 (2003-11-01), Iwasaki
patent: 2002-083946 (2002-03-01), None
patent: WO 99/39372 (1999-08-01), None
patent: WO 99/56097 (1999-11-01), None

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