Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-13
2007-02-13
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S723000, C257S759000, C257S790000, C257S791000, C438S110000, C438S113000, C438S114000, C361S803000, C361S764000, C361S765000
Reexamination Certificate
active
10679467
ABSTRACT:
A semiconductor wafer includes a redistribution layer which is electrically connected with a pad which is an end portion of an interconnect, a first resin layer which is formed over the redistribution layer, a second resin layer which is formed over the first resin layer and covers the side surface of the first resin layer, and an external terminal which is formed to be electrically connected with the redistribution layer in a manner to avoid the pad.
REFERENCES:
patent: 5821626 (1998-10-01), Ouchi et al.
patent: 6235552 (2001-05-01), Kwon et al.
patent: 6242156 (2001-06-01), Teng
patent: 6323542 (2001-11-01), Hashimoto
patent: 6376279 (2002-04-01), Kwon et al.
patent: 6425516 (2002-07-01), Iwatsu et al.
patent: 6534386 (2003-03-01), Irie
patent: 6555921 (2003-04-01), Kwon et al.
patent: 6607938 (2003-08-01), Kwon et al.
patent: 6730589 (2004-05-01), Hashimoto
patent: 6891248 (2005-05-01), Akram et al.
patent: 6906928 (2005-06-01), Hauser et al.
patent: 2002/0063332 (2002-05-01), Yamaguchi et al.
patent: A 11-87558 (1999-03-01), None
patent: A 11-297873 (1999-10-01), None
patent: A 2000-311921 (2000-11-01), None
patent: A 2000-340588 (2000-12-01), None
patent: A 2001-284376 (2001-10-01), None
U.S. Appl. No. 09/700,464, filed Mar. 8, 2000, Hanaoka et al.
U.S. Appl. No. 10/654,449, filed Sep. 4, 2003, Hanaoka.
U.S. Appl. No. 10/667,331, filed Sep. 23, 2003, Hanaoka.
Oliff & Berridg,e PLC
Seiko Epson Corporation
Smith Zandra V.
Tran Thanh Y.
LandOfFree
Semiconductor wafer, semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor wafer, semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wafer, semiconductor device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3856723