Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-27
2007-02-27
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185030, C365S185130
Reexamination Certificate
active
11172421
ABSTRACT:
A programming voltage is applied to source and drain in order to generate hot-hole injection at one end of the channel of a memory cell. The undesired programming of a neighboring memory cell is avoided by the application of an intermediate inhibit voltage to an adjacent bitline. This is done by precharging all the bitlines to the inhibit voltage, either by successively applying the inhibit voltage to every bitline individually or by applying both the upper and the lower programming voltage to one half of the bitlines and then short-circuiting all the bitlines to produce an intermediate voltage.
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Roehr Thomas
Willer Josef
Infineon - Technologies AG
Nguyen Tuan T.
Slater & Matsil L.L.P.
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