Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-02-27
2007-02-27
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S347000, C257SE29287
Reexamination Certificate
active
10887839
ABSTRACT:
A transistor region is a region where a plurality of MOS transistors, including an MOS transistor, are formed, and a dummy region is a region lying under a spiral inductor. In the dummy region, a plurality of dummy active layers are disposed in the main surface of an SOI substrate and a plurality of dummy gate electrodes are disposed covering the respective dummy active layers. The arrangement pattern of the dummy active layers and the arrangement pattern of the dummy gate electrodes nearly match, so that the dummy gate electrodes are aligned accurately on the dummy active layers.
REFERENCES:
patent: 5742091 (1998-04-01), Hebert
patent: 6326673 (2001-12-01), Liou
patent: 6373121 (2002-04-01), Pan
patent: 6426543 (2002-07-01), Maeda et al.
patent: 6452249 (2002-09-01), Maeda et al.
patent: 6541841 (2003-04-01), Maeda et al.
patent: 6611041 (2003-08-01), Maeda et al.
patent: 6638844 (2003-10-01), Verma et al.
patent: 6727572 (2004-04-01), Maeda et al.
patent: 6849913 (2005-02-01), Ohkubo et al.
patent: 2002/0036335 (2002-03-01), Minami
patent: 2004/0004255 (2004-01-01), Yoshimura
patent: 2001-0098377 (2001-11-01), None
patent: 2001-0110633 (2002-12-01), None
Y. Hirano, et al. “Bulk-Layout-Compatible μm SOl-CMOS Technology Using Using Boldy-Fixed Partial Trench Isolation (PTI)” 1999 IEEE Intenational SOL Conference, pp. pp. 131-132.
S. Maeda, et al. “Impact of 018 μm SOI CMOS Technology using Hydrid Trench Isolation with High Resistivity Substrate on Embedded RF/Analog Applications” , 2000 Symposium on VLSI Technology Digest of Techical Papers, pp. 154-155.
Hafiz Mursalin B.
Le Thao X.
McDermott Will & Emery LLP
Renesas Technology Corp.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3853754