Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-08-14
2007-08-14
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S768000, C257S532000, C257S384000, C257SE27016, C257SE27033
Reexamination Certificate
active
11190913
ABSTRACT:
Semiconductor devices and methods for fabricating the same. The semiconductor device includes a resistance-reduced transistor with metallized bilayer overlying source/drain regions and gate electrode thereof. A first dielectric layer with a conductive contact overlies the resistance-reduced transistor. A second dielectric layer having a first conductive feature overlies the first dielectric layer. A third dielectric layer with a second conductive feature overlies the second dielectric layer, forming a conductive pathway down to the top surface of the metallized bilayer over one of the source/drain regions or the gate electrode layer.
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Hsu Ju-Wang
Huang Yi-Chun
Shieh Jyu-Horng
Birch & Stewart Kolasch & Birch, LLP
Mandala Jr. Victor A.
Pert Evan
Taiwan Semiconductor Manufacturing Co. Ltd.
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