Polishing slurry for chemical mechanical polishing and...

Compositions – Etching or brightening compositions

Reexamination Certificate

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C252S079400, C438S692000

Reexamination Certificate

active

10524064

ABSTRACT:
The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.

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Torajiro Honma et al. “ Effect of Various Factors on Grinding Using Jet Mill”, Chemical Industrial Paper Collection, vol. 6, No. 5, 1980 (cited in the specification-abstract translation included) IB/338 and English translation of IPEA/409.

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