Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-05
2007-06-05
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S185290
Reexamination Certificate
active
11358206
ABSTRACT:
A nonvolatile semiconductor memory device includes a control circuit configured to perform a first block erase operation that erases nonvolatile memory cells together in a lump such that threshold voltages of the memory cells are set lower than a first erase verify voltage, to check whether a threshold voltage of each of the nonvolatile memory cells is lower than a first erase-degree-check voltage after the first block erase operation, to perform a first write-back operation in response to a check result indicating that the threshold voltage is lower than the first erase-degree-check voltage, thereby raising the threshold voltage above a voltage higher than the first erase-degree-check voltage, and to perform a second block erase operation that erases the nonvolatile memory cells together in a lump after the first write-back operation such that the threshold voltages of the memory cells are set lower than a second erase verify voltage.
REFERENCES:
patent: 6172911 (2001-01-01), Tanaka et al.
patent: 6356480 (2002-03-01), Sakakibara et al.
patent: 6466484 (2002-10-01), Sakakibara et al.
patent: 7139201 (2006-11-01), Tanaka et al.
patent: 2001-184876 (2001-07-01), None
patent: 2003-162896 (2003-06-01), None
Arent Fox LLP.
Auduong Gene N.
LandOfFree
Nonvolatile semiconductor memory device performing erase... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device performing erase..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device performing erase... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3848190