Optical device with quantum well

Details Optical device with quantum well Optical device with quantum well

2007-06-26

2007-06-26

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S191000, C257S201000

Reexamination Certificate

active

10751887

ABSTRACT:
An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure in which conduction band energy and valence band energy change linearly with a slope with the content change of predetermined components while an energy bandgap between the conduction band energy and the valence band energy is maintained at a predetermined value; and two barrier layers, one of which is positioned on an upper surface of the active layer and the other is positioned on a lower surface of the active layer, and which are made of a Group III-V semiconductor compound and have higher conduction band energy and lower valence band energy than the active layer. A driving voltage is decreased and luminous efficiency and reliability are enhanced.

REFERENCES:
patent: 5412225 (1995-05-01), Dutta et al.
patent: 5606176 (1997-02-01), Nitta
patent: 6100543 (2000-08-01), Sakata
patent: 6859474 (2005-02-01), Johnson et al.

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