Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

2007-12-25

2007-12-25

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S441110

Reexamination Certificate

active

11235663

ABSTRACT:
An ion implantation apparatus structure is provided that does not allow gas to accumulate in the vicinity of a wafer when implantation ions to the wafer. The ion implantation apparatus includes a rotating body that rotates in a fixed direction, a vacuum chamber that houses the rotating body, and an ion beam injecting portion that injects an ion beam to a wafer placed on the rotating body. The rotating body comprises one or more wafer placement boards having a wafer placement face on one face, a driving portion that drives the wafer placement board, and a gas evacuation member provided protruding from one face of the wafer placement board having a gas evacuation wall face on the front in the direction of rotation, and functions such that due to rotation of the wafer placement board, the gas evacuation wall face collides with gas present on one face of the wafer placement board and the gas is evacuated upward or to the rear face of the wafer placement face.

REFERENCES:
patent: 4680474 (1987-07-01), Turner et al.
patent: 4743767 (1988-05-01), Plumb et al.
patent: 5971701 (1999-10-01), Kawamura et al.
patent: 2005/0092938 (2005-05-01), Garza et al.
patent: 11-204075 (1999-07-01), None
Patent Abstracts of Japan, vol. 017, No. 608 (E-1457), Nov. 9, 1993 & JP 05 190133 A (NEC Corp), Jul. 30, 1993.
Patent Abstracts of Japan, vol. 010, No. 255 (E-433) Sep. 2, 1986 & JP 61 081621 A (NEC Corp), Apr. 25, 1986.
International Search Report mailed Jul. 24, 2006 in corresponding EP appln. No. 05256025.7-2208.

Affiliated with

Also associated with

Rating

Ion implantation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3847468