Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-11-13
2007-11-13
Smith, Duane (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S094000, C117S923000, C438S669000, C438S412000, C438S481000
Reexamination Certificate
active
09728193
ABSTRACT:
A crystal substrate and a crystal film of a III-V compound of the nitride system which are manufactured easily and have few dislocations as well as a method of manufacturing a crystal and a method of manufacturing a device with the use thereof are disclosed. On a basal body, formed in order are a base crystal layer of, for example, gallium nitride (GaN), a first mask pattern of, for example, silicon dioxide (SiO2), an intermediate crystal layer of, for example, gallium nitride, a second mask pattern of, for example, silicon dioxide, and a top crystal layer of, for example, gallium nitride. The first and second mask patterns have stripes arranged at least in one direction at unequally spaced intervals. The stripes are different in pitch from pattern to pattern. Thus, the mask patterns at least partly overlie one another in the direction of the thickness of the crystal layers.
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Smith Duane
Song Matthew J.
Sonnenschein Nath & Rosenthal LLP
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