Solid-state imaging device and radiation imaging system

Details Solid-state imaging device and radiation imaging system Solid-state imaging device and radiation imaging system

2007-10-02

2007-10-02

Pyo, Kevin (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S214100, C250S370110, C257S443000, C348S302000

Reexamination Certificate

active

10536319

ABSTRACT:
N+-type semiconductor regions12dare formed on a front surface side of a p−-type layer12cof a semiconductor substrate12, and these n+-type semiconductor and p−-type semiconductor constitute photodiodes. A metal wire14connected to an isolation region12eis formed on a first insulating layer13. The metal wire14is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines53are formed on a third insulating layer16. The signal readout lines53are made of metal such as aluminum, are located above the n+-type semiconductor regions12dwhen viewed from the direction of incidence of light, and are provided so as to extend along the column direction.

REFERENCES:
patent: 2002/0145117 (2002-10-01), Mochizuki
patent: 1 049 171 (2000-11-01), None
patent: 1 173 007 (2002-01-01), None
patent: 1 246 250 (2002-10-01), None
patent: 09-238287 (1997-09-01), None
patent: WO 00/26966 (2000-05-01), None

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