Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2007-06-12
2007-06-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S077000, C257SE27001
Reexamination Certificate
active
10494613
ABSTRACT:
A semiconductor module comprises independently operable segments1(semiconductor elements) on a SiC substrate. Each segment1comprises a source electrode pad2and a gate electrode pad3both provided to the principal surface side of the SiC substrate, and a drain electrode pad provided on the back surface side of the SiC substrate. The semiconductor module further comprises an isolation region such as a trench or a Schottky diode for electrically isolating the adjacent segments1from each other. Only electrode pads2and3of each of the segments1determined as conforming items by a test are connected to electrode terminals41and43, respectively.
REFERENCES:
patent: 6514779 (2003-02-01), Ryu et al.
patent: 48-101888 (1973-12-01), None
patent: 08-195411 (1996-07-01), None
patent: 2001-53275 (2001-02-01), None
patent: 2002-110727 (2002-04-01), None
Kitabatake Makoto
Kusumoto Osamu
Takahashi Kunimasa
Uchida Masao
Yamashita Kenya
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Pert Evan
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