Semiconductor device with a plurality of semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S077000, C257SE27001

Reexamination Certificate

active

10494613

ABSTRACT:
A semiconductor module comprises independently operable segments1(semiconductor elements) on a SiC substrate. Each segment1comprises a source electrode pad2and a gate electrode pad3both provided to the principal surface side of the SiC substrate, and a drain electrode pad provided on the back surface side of the SiC substrate. The semiconductor module further comprises an isolation region such as a trench or a Schottky diode for electrically isolating the adjacent segments1from each other. Only electrode pads2and3of each of the segments1determined as conforming items by a test are connected to electrode terminals41and43, respectively.

REFERENCES:
patent: 6514779 (2003-02-01), Ryu et al.
patent: 48-101888 (1973-12-01), None
patent: 08-195411 (1996-07-01), None
patent: 2001-53275 (2001-02-01), None
patent: 2002-110727 (2002-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with a plurality of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a plurality of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a plurality of semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3846997

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.