Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1979-04-16

1981-09-15

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148187, H01L 2122

Patent

active

042889103

ABSTRACT:
A method of manufacturing devices in a semiconductor body 20 of a first conductivity type. An oxygen impervious masking medium 22 is placed on the body 20. Portions of the medium 22 are removed to define field areas 31 and field oxide is formed in the field areas. The surface of the silicon wafer 23 is thereafter masked to define gate areas 26 and electrical contact areas 30. The exposed medium is removed and the exposed body areas doped to form interconnect runs 28 and a source/drain region 29 of a second conductivity type. An oxide 48, 50 is formed over the doped interconnect runs and source/drain regions of the wafer. The masking medium covering the contact area 30 is removed and the contact area is doped to a second conductivity type. Finally conductors 60, 61 are positioned to provide the desired electrical connections. In a first alternate embodiment the masking medium is a sandwich of different material layers 70, 72 and in a second alternate embodiment the masking medium is a sandwich of three different layers 80, 82 and 84.

REFERENCES:
patent: 4101344 (1978-07-01), Kooi et al.
patent: 4192059 (1980-03-01), Khan et al.
patent: 4231051 (1980-10-01), Custode et al.

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