Nitride based semiconductor laser diode device with a bar mask

Details Nitride based semiconductor laser diode device with a bar mask Nitride based semiconductor laser diode device with a bar mask

2007-06-19

2007-06-19

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S054000

Reexamination Certificate

active

10908825

ABSTRACT:
A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

REFERENCES:
patent: 6711197 (2004-03-01), Tojo et al.
patent: 2004/0094773 (2004-05-01), Kiyoku et al.
patent: 2002-094169 (2002-03-01), None

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