Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-10-09
2007-10-09
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
11377433
ABSTRACT:
Even when the number of rewrite operations varies among erase unit areas, the number of rewrite operations is improved for all of the erase unit areas. A flash EEPROM100comprises a trimming value storing area130of storing a trimming value corresponding to each erase unit area120included in a memory cell array110. When an erase operation and a write operation are performed with respect to a certain erase unit area120, a regulator circuit150converts a voltage boosted by a booster circuit140to a level corresponding to the trimming value for the erase unit area120. When a read determination circuit170detects an abnormality as the number of rewrite operations is increased, the trimming value is updated to a value which causes the regulator circuit150to increase the output voltage.
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Kojima Makoto
Misumi Kenji
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Phung Anh
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